The following parameters are available for unstrained binaries, ternaries, and quaternaries, although not every material has every parameter:
| Parameter | Description |
|---|---|
| CBO | conduction band offset energy relative to InSb VBO |
| CBO_Gamma | Gamma-valley conduction band offset energy relative to InSb VBO |
| CBO_L | L-valley conduction band offset energy relative to InSb VBO |
| CBO_X | X-valley conduction band offset energy relative to InSb VBO |
| Delta_SO | split-off energy |
| Eg | bandgap energy |
| Eg_Gamma | Gamma-valley bandgap energy |
| Eg_Gamma_0 | Gamma-valley bandgap energy at 0 K |
| Eg_L | L-valley bandgap energy |
| Eg_L_0 | L-valley bandgap energy at 0 K |
| Eg_X | X-valley bandgap energy |
| Eg_X_0 | X-valley bandgap energy at 0 K |
| Ep | Ep interband matrix element |
| F | F Kane remote-band parameter |
| VBO | valance band offset energy relative to InSb VBO |
| a | lattice parameter |
| a_300K | lattice parameter at 300 K |
| a_c | conduction band deformation potential |
| a_v | valance band deformation potential |
| alpha_Gamma | Gamma-valley Varshni alpha parameter |
| alpha_L | L-valley Varshni alpha parameter |
| alpha_X | X-valley Varshni alpha parameter |
| b | b shear deformation potential |
| beta_Gamma | Gamma-valley Varshni beta parameter |
| beta_L | L-valley Varshni beta parameter |
| beta_X | X-valley Varshni beta parameter |
| c11 | c11 elastic constant |
| c12 | c12 elastic constant |
| c44 | c44 elastic constant |
| d | d shear deformation potential |
| dielectric | static relative dielectric permittivity (i.e. <~ 1 THz) |
| dielectric_high_frequency | high-frequency dielectric permittivity (i.e. >~ 100 THz) |
| electron_affinity | electron affinity energy |
| luttinger1 | first Luttinger parameter |
| luttinger2 | second Luttinger parameter |
| luttinger3 | third Luttinger parameter |
| luttinger32 | difference between third and second Luttinger parameters (luttinger3 - luttinger2) |
| meff_SO | split-off band effective mass |
| meff_e_Gamma | electron effective mass in the Gamma-valley |
| meff_e_Gamma_0 | electron effective mass in the Gamma-valley at 0 K |
| meff_e_L_DOS | electron effective mass density of states in the L-valley |
| meff_e_L_long | electron effective mass in the longitudinal direction in the L-valley |
| meff_e_L_trans | electron effective mass in the transverse direction in the L-valley |
| meff_e_X_DOS | electron effective mass density of states in the X-valley |
| meff_e_X_long | electron effective mass in the longitudinal direction in the X-valley |
| meff_e_X_trans | electron effective mass in the transverse direction in the X-valley |
| meff_hh_100 | heavy-hole effective mass in the <100> direction |
| meff_hh_110 | heavy-hole effective mass in the <110> direction |
| meff_hh_111 | heavy-hole effective mass in the <111> direction |
| meff_lh_100 | light-hole effective mass in the <100> direction |
| meff_lh_110 | light-hole effective mass in the <110> direction |
| meff_lh_111 | light-hole effective mass in the <111> direction |
| nonparabolicity | Kane band nonparabolicity parameter for the Gamma-valley |
| thermal_expansion | lattice parameter thermal expansion coefficient |
The following parameters are available for strained materials:
| Parameter | Description |
|---|---|
| CBO | conduction band offset energy relative to InSb VBO |
| CBO_Gamma | Gamma-valley conduction band offset energy relative to InSb VBO |
| CBO_L | L-valley conduction band offset energy relative to InSb VBO |
| CBO_X | X-valley conduction band offset energy relative to InSb VBO |
| CBO_hydrostatic_strain_shift | shift in the conduction band offset energy due to the hydrostatic strain component |
| CBO_strain_shift | total shift in the conduction band offset energy due to strain |
| Eg | bandgap energy |
| Eg_hh | bandgap energy between the conduction band and the heavy-hole band |
| Eg_lh | bandgap energy between the conduction band and the light-hole band |
| Eg_strain_shift | total shift in the bandgap energy due to strain |
| VBO | valance band offset energy relative to InSb VBO |
| VBO_hh | heavy-hole valance band offset energy |
| VBO_hh_strain_shift | total shift in the heavy-hole valance band offset energy due to strain |
| VBO_hydrostatic_strain_shift | shift in the valance band offset energy due to the hydrostatic strain component |
| VBO_lh | light-hole valance band offset energy |
| VBO_lh_strain_shift | total shift in the light-hole valance band offset energy due to strain |
| VBO_strain_shift | total shift in the valance band offset energy due to strain |
| VBO_uniaxial_strain_shift | shift in the valance band offset energy due to the uniaxial strain component |
| electron_affinity | electron affinity energy |
| meff_e_Gamma | electron effective mass in the Gamma-valley |
| strain_in_plane | strain in the in-plane directions |
| strain_out_of_plane | strain in the out-of-plane direction (the strain measured by X-ray diffraction symmetric omega-2theta scans) |
| substrate_a | substrate lattice parameter |